$380.04
SAS SSD HGST 1.6TB HUSMM1616ASS204 for Server
서버용 SAS SSD HGST 1.6TB HUSMM1616ASS204
19 days ago
Category
HDD/ODD/SSDHPE/DELL 서버용 HGST MLC SAS SSD 12Gb/S HUSMM1616ASS204 1.6TB
-- Model : HUSMM1616ASS204
• Endurance : 29.2 PBW
• Health : 98% 이상
• Capacity : 1.6TB
-- Feature/function
• SAS 12Gb/s
• MLC NAND Flash memory
• 1100MB/s / 700MB/s sequential R/W
• 130K / 30K IOPS random R/W
• 50K IOPS on 70/30 mix R/W
-- Benefit
• 12Gb/s / 6Gb/s Active-Active Dual Port
• Highest write performance with cost improved NAND for high endurance
• Maximum throughput and IOPS for ultra-fast access to data; >100x faster than typical HDD
-- Model / Part No.
• HUSMM1616ASS204 / 0B32167
• HUSMM1616ASS200 / 0B31068
• HUSMM1616ASS201 / 0B32143
• HUSMM1616ASS205 / 0B32188
-- Configuration
• Interface SAS 12Gb/s Capacity (GB1) at 512 bytes/sector 1600 / 800 / 400 / 200
• Form factor 2.5-inch
• Flash memory technology Multi Level Cell (MLC)
• Sector size support 512, 520, 528, 4K
-- Performance
• Read throughput (max MB/s, sequential 64K) 1100
• Write throughput (max MB/s, sequential 64K) 765
• Read IOPS (max IOPS, random 4K) 130,000
• Write IOPS (max IOPS, random 4k) 100,000
-- Reliability
• Error rate (non-recoverable bits read) 1 in 10^17
• MTBF2 (M hours) 2.5
• Annual failure rate2 (AFR) 0.35%
• Availability (hrs/day x days/wk) 24x7
• Endurance (max PB1, random write) 29.2 / 14.6 / 7.3 / 3.6
-- Model : HUSMM1616ASS204
• Endurance : 29.2 PBW
• Health : 98% 이상
• Capacity : 1.6TB
-- Feature/function
• SAS 12Gb/s
• MLC NAND Flash memory
• 1100MB/s / 700MB/s sequential R/W
• 130K / 30K IOPS random R/W
• 50K IOPS on 70/30 mix R/W
-- Benefit
• 12Gb/s / 6Gb/s Active-Active Dual Port
• Highest write performance with cost improved NAND for high endurance
• Maximum throughput and IOPS for ultra-fast access to data; >100x faster than typical HDD
-- Model / Part No.
• HUSMM1616ASS204 / 0B32167
• HUSMM1616ASS200 / 0B31068
• HUSMM1616ASS201 / 0B32143
• HUSMM1616ASS205 / 0B32188
-- Configuration
• Interface SAS 12Gb/s Capacity (GB1) at 512 bytes/sector 1600 / 800 / 400 / 200
• Form factor 2.5-inch
• Flash memory technology Multi Level Cell (MLC)
• Sector size support 512, 520, 528, 4K
-- Performance
• Read throughput (max MB/s, sequential 64K) 1100
• Write throughput (max MB/s, sequential 64K) 765
• Read IOPS (max IOPS, random 4K) 130,000
• Write IOPS (max IOPS, random 4k) 100,000
-- Reliability
• Error rate (non-recoverable bits read) 1 in 10^17
• MTBF2 (M hours) 2.5
• Annual failure rate2 (AFR) 0.35%
• Availability (hrs/day x days/wk) 24x7
• Endurance (max PB1, random write) 29.2 / 14.6 / 7.3 / 3.6
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Ⓒ 2011-2023. Bungaejangter Inc. all rights reserved.
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